KP1500A/4000v ********************************************************************************************************** high power thyristor for phase control applications features: . all diffused structure . spoke amplifying gate configuration . high dv/dt capability . pressure assembled device electrical characteristics and ratings blocking - off state device type v rrm (1) v drm (1) v rsm (1) KP1500A 4000 4000 4400 v rrm = repetitive peak reverse voltage v drm = repetitive peak off state voltage v rsm = non repetitive peak reverse voltage (2) repetitive peak reverse leakage and off state leakage i rrm / i drm 10 ma 200 ma (3) critical rate of voltage rise dv/dt (4) 1000 v/ sec conducting - on state parameter symbol min. max. typ. units conditions average value of on-state current i t(av) 1500 a sinewave,180 o conduction,t c =70 o c rms value of on-state current i trms 2200 a nominal value peak one cpstcle surge (non repetitive) current i tsm 40000 36000 a a 8.3 msec (60hz), sinusoidal wave- shape, 180 o conduction, t j = 125 o c 10.0 msec (50hz), sinusoidal wave- shape, 180 o conduction, t j = 125 o c i square t i 2 t 4x10 6 a 2 s 8.3 msec and 10.0 msec latching current i l 1500 ma v d = 24 v; r l = 12 ohms holding current i h 250 ma v d = 24 v; i = 2.5 a peak on-state voltage v tm 2.40 v i tm = 5000 a critical rate of rise of on-state current (5) di/dt 300 a/ s switching from v drm 800 v, non-repetitive critical rate of rise of on-state current di/dt 100 a/ s switching from v drm 800 v case 5t notes: all ratings are specified for tj=25 o c unless otherwise stated. (1) all voltage ratings are specified for an applied 50hz/60zhz sinusoidal waveform over the temperature range -40 to +125 o c. (2) 10 msec. max. pulse width (3) maximum value for tj = 125 o c. (4) minimum value for linear and exponential waveshape to 70% rated v drm . gate open. tj = 125 o c. (5) non-repetitive value.
KP1500A/4000v gating parameter symbol min. max. typ. units conditions peak gate power dissipation p gm 200 w t p = 40 us average gate power dissipation p g(av) 5 w peak gate current i gm 20 a gate current i gt 300 ma gate voltage v gt 0.30 3.5 v dynamic parameter symbol min. max. typ. units conditions delay time t d s turn-off time (with v r = -50 v) t q s thermal and mechanical characteristics and ratings parameter symbol min. max. typ. units conditions operating temperature t j -40 +125 o c storage temperature t stg -40 +150 o c thermal resistance - junction to case r (j-c) 0.012 o c/w double sided cooled single sided cooled thermal resistamce - case to sink r (c-s) 0.002 o c/w double sided cooled * single sided cooled * mounting force p 8000 10000 lb. kn weight w lb. kg. * mounting surfaces smooth, flat and greased note : for case outline and dimensions, see case outline drawing a: 73 mm b: 109 mm c: 99 mm e: 26 mm
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